Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature (2016)
Pavanello, Marcelo Antonio 
; Souza, Michelly de; Ribeiro, Thales Augusto; Martino, João Antonio ; Flandre, Denis
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: SILÍCIO, SEMICONDUTORES
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PAVANELLO, Marcelo Antonio et al. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology, v. 31, n. 11, p. 114005, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/11/114005. Acesso em: 10 maio 2024.APA
Pavanello, M. A., Souza, M. de, Ribeiro, T. A., Martino, J. A., & Flandre, D. (2016). Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology, 31( 11), 114005. doi:10.1088/0268-1242/31/11/114005NLM
Pavanello MA, Souza M de, Ribeiro TA, Martino JA, Flandre D. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114005.[citado 2024 maio 10 ] Available from: https://doi.org/10.1088/0268-1242/31/11/114005Vancouver
Pavanello MA, Souza M de, Ribeiro TA, Martino JA, Flandre D. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114005.[citado 2024 maio 10 ] Available from: https://doi.org/10.1088/0268-1242/31/11/114005
